spesifikasi ld mos blf 578
1.1General description
A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
1.2Features
Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 μs with δ of 20 %:
Output power = 1200 W
Power gain = 24 dB
Efficiency = 71 %
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (10 MHz to 500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
1.3Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
BLF578
Power LDMOS transistor
Rev. 02
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
BLF578_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 February 2010 2 of 14
NXP Semiconductors BLF578
Power LDMOS transistor
2.Pinning information
[1]Connected to flange.
3.Ordering information
4.Limiting values
Table 2.Pinning
Pin
Description
Simplified outline
Graphic symbol
1
drain1
2
drain2
3
gate1
4
gate2
5
source
[1]
51243
43512sym117
Table 3.Ordering information
Type number
Package
Name
Description
Version
BLF578
-
flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads
SOT539A
Table 4.Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
-
110
V
VGS
gate-source voltage
−0.5
+11
V
ID
drain current
-
88
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
225
°C
BLF578_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 February 2010 3 of 14
NXP Semiconductors BLF578
Power LDMOS transistor
5.Thermal characteristics
[1]Tj is the junction temperature.
[2]Rth(j-c) is measured under RF conditions.
[3]See Figure 1.
6.Characteristics
Table 5.Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-c)
thermal resistance from junction to case
Tj = 150 °C
[1][2]
0.14
K/W
Zth(j-c)
transient thermal impedance from junction to case
Tj = 150 °C; tp = 100 μs; δ = 20 %
[3]
0.04
K/W
(1)δ = 1 %
(2)δ = 2 %
(3)δ = 5 %
(4)δ = 10 %
(5)δ = 20 %
(6)δ = 50 %
(7)δ = 100 % (DC)
Fig 1.Transient thermal impedance from junction to case as function of pulse duration
001aak9240.060.120.18Zth(j-c)(K/W)010−710−110−410−6110−3tp (s)10−51010−2(7)(6)(5)(4)(3)(2)(1)
Table 6.DC characteristics
Tj = 25 °C; per section unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS
drain-source breakdown voltage
VGS = 0 V; ID = 2.5 mA
110
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 500 mA
1.25
1.7
2.25
V
VGSq
gate-source quiescent voltage
VDS = 50 V; ID = 20 mA
0.8
1.3
1.8
V
IDSS
drain leakage current
VGS = 0 V; VDS = 50 V
-
-
2.8
μA
BLF578_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 February 2010 4 of 14
NXP Semiconductors BLF578
Power LDMOS transistor
6.1Ruggedness in class-AB operation
The BLF578 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 40 mA; PL = 1200W pulsed; f = 225 MHz.
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V; VDS = 10 V
58
70
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
280
nA
RDS(on)
drain-source on-state resistance
VGS = VGS(th) + 3.75 V; ID = 16.66 A
-
0.07
-
Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
-
3
-
pF
Ciss
input capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
-
403
-
pF
Coss
output capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
-
138
-
pF
Table 7.RF characteristics
Mode of operation: pulsed RF; tp = 100 μs; δ = 20 %; f = 225 MHz; RF performance at VDS = 50 V; IDq = 40 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL = 1200 W
23
24
25.4
dB
RLin
input return loss
PL = 1200 W
14
17.5
-
dB
ηD
drain efficiency
PL = 1200 W
68
71
-
%
VGS = 0 V; f = 1 MHz.
Fig 2.Output capacitance as a function of drain-source voltage; typical values per section
Table 6. DC characteristics …continued
Tj = 25 °C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VDS (V)05020304010001aaj113300150450600750900Coss(pF)0
BLF578_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 February 2010 5 of 14
NXP Semiconductors BLF578
Power LDMOS transistor
7.Application information
7.1Reliability
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1/ δ.
(1)Tj = 100 °C
(2)Tj = 110 °C
(3)Tj = 120 °C
(4)Tj = 130 °C
(5)Tj = 140 °C
(6)Tj = 150 °C
(7)Tj = 160 °C
(8)Tj = 170 °C
(9)Tj = 180 °C
(10)Tj = 190 °C
(11)Tj = 200 °C
Fig 3.BLF578 electromigration (ID, total device)
001aaj11410210104103105Years1Idc (A)020168124(1) (2) (3) (4) (5) (6)(7) (8) (9) (10) (11)
BLF578_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 February 2010 6 of 14
NXP Semiconductors BLF578
Power LDMOS transistor
8.Test information
8.1Impedance information
8.2RF performance
The following figures are measured in a class-AB production test circuit.
8.2.11-Tone CW pulsed
Table 8.Typical impedance
Simulated ZS and ZL test circuit impedances.
f
ZS
ZL
MHz
Ω
Ω
225
3.2 + j2.6
3.7 − j0.2
Fig 4.Definition of transistor impedance
001aaf059drainZLZSgate
VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp = 100 μs; δ = 20 %.
VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp = 100 μs; δ = 20 %.
(1)PL(1dB) = 61.0 dBm (1260 W)
(2)PL(3dB) = 61.4 dBm (1400 W)
Fig 5.Power gain and drain efficiency as function of load power; typical values
Fig 6.Load Power as function of source power; typical values
PL (W)100160013007001000400001aak92622202426Gp(dB)1840206080ηD(%)0GpηD
Ps (dBm)34403836001aak92765PL(dBm)58596061626364ideal PLPL(1)(2)
BLF578_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 February 2010 7 of 14
NXP Semiconductors BLF578
Power LDMOS transistor
VDS = 50 V; f = 225 MHz; tp = 100 μs; δ = 20 %.
(1)IDq = 0 mA
(2)IDq = 40 mA
(3)IDq = 80 mA
(4)IDq = 160 mA
VDS = 50 V; f = 225 MHz; tp = 100 μs; δ = 20 %.
(1)IDq = 0 mA
(2)IDq = 40 mA
(3)IDq = 80 mA
(4)IDq = 160 mA
Fig 7.Power gain as a function of load power; typical values
Fig 8.Drain efficiency as a function of load power; typical values
PL (W)100160013007001000400001aak92822202426Gp(dB)18(4)(3)(2)(1)
PL (W)100160013007001000400001aak92940206080ηD(%)0(1)(2)(3)(4)
IDq = 40 mA; f = 225 MHz; tp = 100 μs; δ = 20 %.
(1)VDS = 30 V
(2)VDS = 35 V
(3)VDS = 40 V
(4)VDS = 45 V
(5)VDS = 50 V
IDq = 40 mA; f = 225 MHz; tp = 100 μs; δ = 20 %.
(1)VDS = 30 V
(2)VDS = 35 V
(3)VDS = 40 V
(4)VDS = 45 V
(5)VDS = 50 V
Fig 9.Power gain as a function of load power; typical values
Fig 10.Drain efficiency as a function of load power; typical values
PL (W)100160013007001000400001aak93122202426Gp(dB)18(4)(5)(3)(2)(1)
PL (W)100160013007001000400001aak93340206080ηD(%)0(1)(2)(3)(4)(5)
BLF578_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 February 2010 8 of 14
NXP Semiconductors BLF578
Power LDMOS transistor
8.3Test circuit
See Table 9 for a list of components.
Fig 11.Class-AB common-source production test circuit
C7C8C3C4C1C2VGGVGGC9C10C19C20C17C13C11R3R2R1C12R4C15C14C18C16L10L11L4L5T1T2L8L9L6L7C21C22C6L3C5input50 ΩC27C26C25C28VDDVDDR6L2R5L1C23L12C24output50 Ω001aaj123
See Table 9 for a list of components.
Fig 12.Component layout for class-AB production test circuit
001aaj124C9C1C2C3C4R1R2C5C6C7C8T1C10C11C13C15C14C17C19C21T2C22C24C27C28C25C26R6R5L2L1C23C16C18C20R3R4C12
BLF578_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 February 2010 9 of 14
NXP Semiconductors BLF578
Power LDMOS transistor
[1]American Technical Ceramics type 100B or capacitor of same quality.
Table 9.List of components
For production test circuit, see Figure 11 and Figure 12.
Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 μm.
Component
Description
Value
Remarks
C1, C2, C11, C12
multilayer ceramic chip capacitor
4.7 μF
TDK4532X7R1E475Mt020U
C2, C3, C27, C28
multilayer ceramic chip capacitor
100 nF
Murata X7R 250 V
C5, C7, C8, C21, C22
multilayer ceramic chip capacitor
1 nF
[1]
C6
multilayer ceramic chip capacitor
30 pF
[1]
C9, C10, C13, C15
multilayer ceramic chip capacitor
62 pF
[1]
C14
multilayer ceramic chip capacitor
36 pF
[1]
C16, C17
multilayer ceramic chip capacitor
24 pF
[1]
C18
multilayer ceramic chip capacitor
30 pF
[1]
C19
multilayer ceramic chip capacitor
27 pF
[1]
C20
multilayer ceramic chip capacitor
9.1 pF
[1]
C23
multilayer ceramic chip capacitor
13 pF
[1]
C24
multilayer ceramic chip capacitor
16 pF
[1]
C25, C26
electrolytic capacitor
220 μF; 63 V
L1, L2
3 turns 1 mm copper wire
D = 2 mm; length = 3 mm
L3, L12
stripline
-
(L × W) 15 mm × 2.4 mm
L4, L5, L10, L11
stripline
-
(L × W) 47 mm × 10 mm
L6, L7, L8, L9
stripline
-
(L × W) 8 mm × 15 mm
R1, R2
metal film resistor
2 Ω; 0.6 W
R3, R4
metal film resistor
20 Ω; 0.6 W
R5, R6
metal film resistor
1 Ω; 0.6 W
T1, T2
semi rigid coax
50 Ω; 58 mm
EZ-141-AL-TP-M17
BLF578_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 February 2010 10 of 14
NXP Semiconductors BLF578
Power LDMOS transistor
9.Package outline
Fig 13.Package outline SOT539A
REFERENCESOUTLINEVERSIONEUROPEANPROJECTIONISSUE DATE IEC JEDEC EIAJSOT539A10-02-0200-03-030510 mmscalepAFbeDU2LHQc51243D1EAw1ABMMMqU1H1CBMMw2CE1Mw3UNITAmmDb11.8111.560.180.1031.5530.9413.729.539.2717.1216.1010.2910.034.74.ceU20.250.250.51w335.56qw2w1F1.751.50U141.2841.02H125.5325.27p3.303.05Q2.262.01EE19.509.30inches0.4650.4550.0070.0041.2421.218D31.5230.961.2411.2190.5400.3750.3650.6740.6340.4050.3950.1850.1650.0100.0100.0201.4000.0690.0591.6251.6151.0050.9950.1300.1200.890.0790.3740.366H3.482.970.1370.117LDIMENSIONS (millimetre dimensions are derived from the original inch dimensions)Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leadsSOT539ANote1. millimeter dimensions are derived from the original inch dimensions.2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
BLF578_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 February 2010 11 of 14
NXP Semiconductors BLF578
Power LDMOS transistor
10.Abbreviations
11.Revision history
Table 10.Abbreviations
Acronym
Description
CW
Continuous Wave
EDGE
Enhanced Data rates for GSM Evolution
GSM
Global System for Mobile communications
HF
High Frequency
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
RF
Radio Frequency
TTF
Time To Failure
VSWR
Voltage Standing-Wave Ratio
Table 11.Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF578_2
20100204
Product data sheet
-
BLF578_1
Modifications:
•Table 1 on page 1: added information for CW performance.
•Section 1 on page 1: changed typical value of ηD.
•Table 4 on page 2: changed maximum value of ID.
•Table 5 on page 3: changed value of Rth(j-c).
•Table 5 on page 3: added information about Zth(j-c).
•Figure 1 on page 3: added figure.
•Table 6 on page 3: added values vor VGSq.
•Table 6 on page 3: changed typical value of IDSX.
•Table 7 on page 4: changed some values.
•Section 8.2.1 on page 6: changed some graphs.
BLF578_1
20081211
Objective data sheet
-
-
BLF578_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 February 2010 12 of 14
NXP Semiconductors BLF578
Power LDMOS transistor
12.Legal information
12.1Data sheet status
[1]Please consult the most recently issued document before initiating or completing a design.
[2]The term ‘short data sheet’ is explained in section “Definitions”.
[3]The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2Definitions
Draft —
The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
Short data sheet —
A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
Product specification —
The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
12.3Disclaimers
Limited warranty and liability —
Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes —
NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
Suitability for use —
NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
Applications —
Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect.
Limiting values —
Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.
Terms and conditions of commercial sale —
NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.
No offer to sell or license —
Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Export control —
This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
Non-automotive qualified products —
Unless the data sheet of an NXP Semiconductors product expressly states that the product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
BLF578_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 February 2010 13 of 14
NXP Semiconductors BLF578
Power LDMOS transistor
product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.
12.4Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
13.Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BLF578
Power LDMOS transistor
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 4 February 2010
Document identifier: BLF578_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
1.1General description
A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
1.2Features
Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 μs with δ of 20 %:
Output power = 1200 W
Power gain = 24 dB
Efficiency = 71 %
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (10 MHz to 500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
1.3Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
BLF578
Power LDMOS transistor
Rev. 02
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
BLF578_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 February 2010 2 of 14
NXP Semiconductors BLF578
Power LDMOS transistor
2.Pinning information
[1]Connected to flange.
3.Ordering information
4.Limiting values
Table 2.Pinning
Pin
Description
Simplified outline
Graphic symbol
1
drain1
2
drain2
3
gate1
4
gate2
5
source
[1]
51243
43512sym117
Table 3.Ordering information
Type number
Package
Name
Description
Version
BLF578
-
flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads
SOT539A
Table 4.Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
-
110
V
VGS
gate-source voltage
−0.5
+11
V
ID
drain current
-
88
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
225
°C
BLF578_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 February 2010 3 of 14
NXP Semiconductors BLF578
Power LDMOS transistor
5.Thermal characteristics
[1]Tj is the junction temperature.
[2]Rth(j-c) is measured under RF conditions.
[3]See Figure 1.
6.Characteristics
Table 5.Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-c)
thermal resistance from junction to case
Tj = 150 °C
[1][2]
0.14
K/W
Zth(j-c)
transient thermal impedance from junction to case
Tj = 150 °C; tp = 100 μs; δ = 20 %
[3]
0.04
K/W
(1)δ = 1 %
(2)δ = 2 %
(3)δ = 5 %
(4)δ = 10 %
(5)δ = 20 %
(6)δ = 50 %
(7)δ = 100 % (DC)
Fig 1.Transient thermal impedance from junction to case as function of pulse duration
001aak9240.060.120.18Zth(j-c)(K/W)010−710−110−410−6110−3tp (s)10−51010−2(7)(6)(5)(4)(3)(2)(1)
Table 6.DC characteristics
Tj = 25 °C; per section unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS
drain-source breakdown voltage
VGS = 0 V; ID = 2.5 mA
110
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 500 mA
1.25
1.7
2.25
V
VGSq
gate-source quiescent voltage
VDS = 50 V; ID = 20 mA
0.8
1.3
1.8
V
IDSS
drain leakage current
VGS = 0 V; VDS = 50 V
-
-
2.8
μA
BLF578_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 February 2010 4 of 14
NXP Semiconductors BLF578
Power LDMOS transistor
6.1Ruggedness in class-AB operation
The BLF578 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 40 mA; PL = 1200W pulsed; f = 225 MHz.
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V; VDS = 10 V
58
70
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
280
nA
RDS(on)
drain-source on-state resistance
VGS = VGS(th) + 3.75 V; ID = 16.66 A
-
0.07
-
Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
-
3
-
pF
Ciss
input capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
-
403
-
pF
Coss
output capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
-
138
-
pF
Table 7.RF characteristics
Mode of operation: pulsed RF; tp = 100 μs; δ = 20 %; f = 225 MHz; RF performance at VDS = 50 V; IDq = 40 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL = 1200 W
23
24
25.4
dB
RLin
input return loss
PL = 1200 W
14
17.5
-
dB
ηD
drain efficiency
PL = 1200 W
68
71
-
%
VGS = 0 V; f = 1 MHz.
Fig 2.Output capacitance as a function of drain-source voltage; typical values per section
Table 6. DC characteristics …continued
Tj = 25 °C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VDS (V)05020304010001aaj113300150450600750900Coss(pF)0
BLF578_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 February 2010 5 of 14
NXP Semiconductors BLF578
Power LDMOS transistor
7.Application information
7.1Reliability
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1/ δ.
(1)Tj = 100 °C
(2)Tj = 110 °C
(3)Tj = 120 °C
(4)Tj = 130 °C
(5)Tj = 140 °C
(6)Tj = 150 °C
(7)Tj = 160 °C
(8)Tj = 170 °C
(9)Tj = 180 °C
(10)Tj = 190 °C
(11)Tj = 200 °C
Fig 3.BLF578 electromigration (ID, total device)
001aaj11410210104103105Years1Idc (A)020168124(1) (2) (3) (4) (5) (6)(7) (8) (9) (10) (11)
BLF578_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 February 2010 6 of 14
NXP Semiconductors BLF578
Power LDMOS transistor
8.Test information
8.1Impedance information
8.2RF performance
The following figures are measured in a class-AB production test circuit.
8.2.11-Tone CW pulsed
Table 8.Typical impedance
Simulated ZS and ZL test circuit impedances.
f
ZS
ZL
MHz
Ω
Ω
225
3.2 + j2.6
3.7 − j0.2
Fig 4.Definition of transistor impedance
001aaf059drainZLZSgate
VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp = 100 μs; δ = 20 %.
VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp = 100 μs; δ = 20 %.
(1)PL(1dB) = 61.0 dBm (1260 W)
(2)PL(3dB) = 61.4 dBm (1400 W)
Fig 5.Power gain and drain efficiency as function of load power; typical values
Fig 6.Load Power as function of source power; typical values
PL (W)100160013007001000400001aak92622202426Gp(dB)1840206080ηD(%)0GpηD
Ps (dBm)34403836001aak92765PL(dBm)58596061626364ideal PLPL(1)(2)
BLF578_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 February 2010 7 of 14
NXP Semiconductors BLF578
Power LDMOS transistor
VDS = 50 V; f = 225 MHz; tp = 100 μs; δ = 20 %.
(1)IDq = 0 mA
(2)IDq = 40 mA
(3)IDq = 80 mA
(4)IDq = 160 mA
VDS = 50 V; f = 225 MHz; tp = 100 μs; δ = 20 %.
(1)IDq = 0 mA
(2)IDq = 40 mA
(3)IDq = 80 mA
(4)IDq = 160 mA
Fig 7.Power gain as a function of load power; typical values
Fig 8.Drain efficiency as a function of load power; typical values
PL (W)100160013007001000400001aak92822202426Gp(dB)18(4)(3)(2)(1)
PL (W)100160013007001000400001aak92940206080ηD(%)0(1)(2)(3)(4)
IDq = 40 mA; f = 225 MHz; tp = 100 μs; δ = 20 %.
(1)VDS = 30 V
(2)VDS = 35 V
(3)VDS = 40 V
(4)VDS = 45 V
(5)VDS = 50 V
IDq = 40 mA; f = 225 MHz; tp = 100 μs; δ = 20 %.
(1)VDS = 30 V
(2)VDS = 35 V
(3)VDS = 40 V
(4)VDS = 45 V
(5)VDS = 50 V
Fig 9.Power gain as a function of load power; typical values
Fig 10.Drain efficiency as a function of load power; typical values
PL (W)100160013007001000400001aak93122202426Gp(dB)18(4)(5)(3)(2)(1)
PL (W)100160013007001000400001aak93340206080ηD(%)0(1)(2)(3)(4)(5)
BLF578_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 February 2010 8 of 14
NXP Semiconductors BLF578
Power LDMOS transistor
8.3Test circuit
See Table 9 for a list of components.
Fig 11.Class-AB common-source production test circuit
C7C8C3C4C1C2VGGVGGC9C10C19C20C17C13C11R3R2R1C12R4C15C14C18C16L10L11L4L5T1T2L8L9L6L7C21C22C6L3C5input50 ΩC27C26C25C28VDDVDDR6L2R5L1C23L12C24output50 Ω001aaj123
See Table 9 for a list of components.
Fig 12.Component layout for class-AB production test circuit
001aaj124C9C1C2C3C4R1R2C5C6C7C8T1C10C11C13C15C14C17C19C21T2C22C24C27C28C25C26R6R5L2L1C23C16C18C20R3R4C12
BLF578_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 February 2010 9 of 14
NXP Semiconductors BLF578
Power LDMOS transistor
[1]American Technical Ceramics type 100B or capacitor of same quality.
Table 9.List of components
For production test circuit, see Figure 11 and Figure 12.
Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 μm.
Component
Description
Value
Remarks
C1, C2, C11, C12
multilayer ceramic chip capacitor
4.7 μF
TDK4532X7R1E475Mt020U
C2, C3, C27, C28
multilayer ceramic chip capacitor
100 nF
Murata X7R 250 V
C5, C7, C8, C21, C22
multilayer ceramic chip capacitor
1 nF
[1]
C6
multilayer ceramic chip capacitor
30 pF
[1]
C9, C10, C13, C15
multilayer ceramic chip capacitor
62 pF
[1]
C14
multilayer ceramic chip capacitor
36 pF
[1]
C16, C17
multilayer ceramic chip capacitor
24 pF
[1]
C18
multilayer ceramic chip capacitor
30 pF
[1]
C19
multilayer ceramic chip capacitor
27 pF
[1]
C20
multilayer ceramic chip capacitor
9.1 pF
[1]
C23
multilayer ceramic chip capacitor
13 pF
[1]
C24
multilayer ceramic chip capacitor
16 pF
[1]
C25, C26
electrolytic capacitor
220 μF; 63 V
L1, L2
3 turns 1 mm copper wire
D = 2 mm; length = 3 mm
L3, L12
stripline
-
(L × W) 15 mm × 2.4 mm
L4, L5, L10, L11
stripline
-
(L × W) 47 mm × 10 mm
L6, L7, L8, L9
stripline
-
(L × W) 8 mm × 15 mm
R1, R2
metal film resistor
2 Ω; 0.6 W
R3, R4
metal film resistor
20 Ω; 0.6 W
R5, R6
metal film resistor
1 Ω; 0.6 W
T1, T2
semi rigid coax
50 Ω; 58 mm
EZ-141-AL-TP-M17
BLF578_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 February 2010 10 of 14
NXP Semiconductors BLF578
Power LDMOS transistor
9.Package outline
Fig 13.Package outline SOT539A
REFERENCESOUTLINEVERSIONEUROPEANPROJECTIONISSUE DATE IEC JEDEC EIAJSOT539A10-02-0200-03-030510 mmscalepAFbeDU2LHQc51243D1EAw1ABMMMqU1H1CBMMw2CE1Mw3UNITAmmDb11.8111.560.180.1031.5530.9413.729.539.2717.1216.1010.2910.034.74.ceU20.250.250.51w335.56qw2w1F1.751.50U141.2841.02H125.5325.27p3.303.05Q2.262.01EE19.509.30inches0.4650.4550.0070.0041.2421.218D31.5230.961.2411.2190.5400.3750.3650.6740.6340.4050.3950.1850.1650.0100.0100.0201.4000.0690.0591.6251.6151.0050.9950.1300.1200.890.0790.3740.366H3.482.970.1370.117LDIMENSIONS (millimetre dimensions are derived from the original inch dimensions)Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leadsSOT539ANote1. millimeter dimensions are derived from the original inch dimensions.2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
BLF578_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 February 2010 11 of 14
NXP Semiconductors BLF578
Power LDMOS transistor
10.Abbreviations
11.Revision history
Table 10.Abbreviations
Acronym
Description
CW
Continuous Wave
EDGE
Enhanced Data rates for GSM Evolution
GSM
Global System for Mobile communications
HF
High Frequency
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
RF
Radio Frequency
TTF
Time To Failure
VSWR
Voltage Standing-Wave Ratio
Table 11.Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF578_2
20100204
Product data sheet
-
BLF578_1
Modifications:
•Table 1 on page 1: added information for CW performance.
•Section 1 on page 1: changed typical value of ηD.
•Table 4 on page 2: changed maximum value of ID.
•Table 5 on page 3: changed value of Rth(j-c).
•Table 5 on page 3: added information about Zth(j-c).
•Figure 1 on page 3: added figure.
•Table 6 on page 3: added values vor VGSq.
•Table 6 on page 3: changed typical value of IDSX.
•Table 7 on page 4: changed some values.
•Section 8.2.1 on page 6: changed some graphs.
BLF578_1
20081211
Objective data sheet
-
-
BLF578_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 February 2010 12 of 14
NXP Semiconductors BLF578
Power LDMOS transistor
12.Legal information
12.1Data sheet status
[1]Please consult the most recently issued document before initiating or completing a design.
[2]The term ‘short data sheet’ is explained in section “Definitions”.
[3]The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2Definitions
Draft —
The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
Short data sheet —
A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
Product specification —
The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
12.3Disclaimers
Limited warranty and liability —
Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes —
NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
Suitability for use —
NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
Applications —
Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect.
Limiting values —
Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.
Terms and conditions of commercial sale —
NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.
No offer to sell or license —
Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Export control —
This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
Non-automotive qualified products —
Unless the data sheet of an NXP Semiconductors product expressly states that the product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
BLF578_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 February 2010 13 of 14
NXP Semiconductors BLF578
Power LDMOS transistor
product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.
12.4Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
13.Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BLF578
Power LDMOS transistor
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 4 February 2010
Document identifier: BLF578_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
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